ap4506gem-hf advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 30v low on-resistance r ds(on) 30m fast switching performance i d 6.4a rohs compliant & halogen-free p-ch bv dss -30v r ds(on) 40m description i d -6a absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol parameter rating units n-channel p-channel v ds drain-source voltage 30 -30 v v gs gate-source voltage + 20 + 20 v i d @t a =25 6.4 -6.0 a i d @t a =70 5.1 -4.8 a i dm pulsed drain current 1 30 -30 a p d @t a =25 total power dissipation 2.0 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice drain current, v gs @ 10v 3 201501074 parameter 1 thermal data halogen-free product drain current, v gs @ 10v 3 s1 g1 d1 s2 g2 d2 s1 g1 s2 g2 d1 d1 d2 d2 so-8 ap4506 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =6a - - 30 m v gs =4.5v, i d =4a - - 36 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =6a - 17 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =6a - 8.3 13 nc q gs gate-source charge v ds =24v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time v ds =15v - 6 - ns t r rise time i d =1a - 5.6 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 17 - ns t f fall time r d =15 - 3.6 - ns c iss input capacitance v gs =0v - 575 920 pf c oss output capacitance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.5a, v gs =0v - - 1.3 v t rr reverse recovery time i s =6a, v gs =0v - 19 - ns q rr reverse recovery charge di/dt=100a/s - 14 - nc 2 ap4506gem-hf n-ch electrical characteristics@ t j =25 o c(unless otherwise specified)
ap4506gem-hf symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-5a - - 40 m v gs =-4.5v, i d =-3a - - 52 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-5a - 12 - s i dss drain-source leakage current v ds =-24v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 30 ua q g total gate charge i d =-5a - 12.6 20 nc q gs gate-source charge v ds =-24v - 2.4 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 6.2 - nc t d(on) turn-on delay time v ds =-15v - 7 - ns t r rise time i d =-1a - 5.6 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-10v - 24 - ns t f fall time r d =15 - 35 - ns c iss input capacitance v gs =0v - 1045 1670 pf c oss output capacitance v ds =-20v - 220 - pf c rss reverse transfer capacitance f=1.0mhz - 150 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.5a, v gs =0v - - -1.3 v t rr reverse recovery time i s =-5a, v gs =0v - 23 - ns q rr reverse recovery charge di/dt=-100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board , t < 10sec ; 135 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 3 p-ch electrical characteristics@t j =25 o c(unless otherwise specified)
ap4506gem-hf n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate thresho ld voltage v.s. reverse diode junction temperature 4 0 10 20 30 0 1 2 3 4 5 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 10 20 30 0 1 2 3 4 5 6 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 16 18 20 22 24 26 28 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 4 a t a =25 o c 0.8 1.0 1.2 1.4 1.6 1.8 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d = 6 a v g =10v
ap4506gem-hf n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12 . gate charge waveform 5 q v g 4.5v q gs q gd q g charge 0 4 8 12 0 5 10 15 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =24v 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
ap4506gem-hf p-channel fig 1. typical output characteristics f ig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate thresho ld voltage v.s. reverse diode junction temperature 6 0 10 20 30 0 1 2 3 4 5 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 25 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 24 28 32 36 40 44 2 4 6 8 10 -v gs ,gate-to-source voltage (v) r ds(on) (m ? ) i d = -3 a t a = 25 o c 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 10 20 30 0 1 2 3 4 5 6 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -10v -7.0v -5.0v -4.5v v g = - 3.0v 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -5a v g = -10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
ap4506gem-hf p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effe ctive transient thermal impedance fig 11. switching time waveform fig 12 . gate charge waveform 7 0 4 8 12 0 10 20 30 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -5 a v ds = -24 v 10 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc q v g -4.5v q gs q gd q g charge 0.01 0.1 1 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse t d(on) t r t d(off) t f v ds v gs 10% 90%
ap4506gem-hf marking information 8 4506gem ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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